IRFP470【PDF 1/2 页】MOSFET N-CH 500V 24A TO-247AD

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Sheet目录446

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MegaMOS TM FET

IRFP 470

V DSS = 500 V

I D (cont) = 24 A

R DS(on) = 0.23 ?

N-Channel Enhancement Mode

Symbol

Test Conditions

Maximum Ratings

TO-247 AD

V DSS

V DGR

T J = 25 ° C to 150 ° C

T J = 25 ° C to 150 ° C; R GS = 1 M ?

500

V GS

V GSM

Continuous

Transient

± 20

± 30

D (TAB)

I D25

I DM

T C = 25 ° C

T C = 25 ° C, pulse width limited by T JM

G = Gate,

S = Source,

D = Drain,

TAB = Drain

I AR

E AR

dv/dt

P D

T J

T JM

T stg

T C = 25 ° C

I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,

T J ≤ 150 ° C, R G = 2 ?

T C = 25 ° C

300

-55 ... +150

150

-55 ... +150

V/ns

° C

M d

Mounting torque

1.13/10 Nm/lb.in.

Features

Weight

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

° C

International standard packages

Low R DS (on) HDMOS TM process

Rugged polysilicon gate cell structure

High commutating dv/dt rating

Fast switching times

Symbol

Test Conditions

Characteristic Values

(T J = 25 ° C, unless otherwise specified)

min. typ. max.

Applications

Switch-mode and resonant-mode

power supplies

V DSS

V GS(th)

I GSS

I DSS

V GS = 0 V, I D = 250 μ A

V DS = V GS , I D = 250 μ A

V GS = ± 20 V DC , V DS = 0

V DS = 0.8 ? V DSS

V GS = 0 V

T J = 25 ° C

T J = 125 ° C

500

± 100

250

μ A

Motor controls

Uninterruptible Power Supplies (UPS)

DC choppers

Advantages

Easy to mount with 1 screw

R DS(on)

V GS = 10 V, I D = 0.5 ? I D25

Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %

0.23

(isolated mounting screw hole)

Space savings

High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

92605E(5/97)

1-2

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